IPG20N10S4L-35
盘装，每盘5000个，封装PG-TDSON-8 英飞凌公司生产MOS，20A 100V 内阻35mR
| Parametrics | IPG20N10S4L-35 |
|---|---|
| Budgetary Price €/1k | 0.41 |
| ID (@25°C) max | 20 A |
| IDpuls max | 80 A |
| Operating Temperature min max | -55 °C 175 °C |
| Ptot max | 43 W |
| Package | dual SS08 (PG-TDSON-8) |
| Polarity | N+N |
| QG (typ @10V) max | 13.4 nC |
| RDS (on) (@10V) max | 35 mΩ |
| RthJC max | 3.5 K/W |
| Technology | OptiMOS™-T2 |
| VDS max | 100 V |
| VGS(th) max | 2.1 V ; 1.1 V |