IKW40N120H3
The third generation of high frequency insulated gate transistors produced by Infineon: 40A 1200V to-247-3, 30 per tube, 240 per box
| Parametrics | IKW40N120H3 |
|---|---|
| Eoff (Hard Switching) | 1.2 mJ |
| Eon | 3.2 mJ |
| IC (@ 25°) max | 80 A |
| IC (@ 100°) max | 40 A |
| ICpuls max | 160 A |
| IF max | 40 A |
| IFpuls max | 160 A |
| Irrm | 12.8 A |
| Ptot max | 483 W |
| Package | TO-247-3 |
| QGate | 185 nC |
| Qrr | 1900 nC |
| Switching Frequency | HighSpeed3 20-100 kHz |
| Switching Frequency min max | 20 kHz 100 kHz |
| Technology | IGBT HighSpeed 3 |
| VCE(sat) | 2.05 V |
| VCE max | 1200 V |
| VF | 2.4 V |
| td(off) | 290 ns |
| td(on) | 30 ns |
| tf | 16 ns |
| tr | 57 ns |